Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Static drain-source on-resistance:
RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Fast switching application.
-...
