IPU80R1K4CE
Overview
- Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IPU80R1K4CE |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 260.61 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPU80R1K4CE | Infineon | MOSFET |
| IPU80R1K4P7 | Infineon | MOSFET |
| IPU80R1K0CE | Infineon | MOSFET |