IPU80R1K4CE Datasheet

The IPU80R1K4CE is a MOSFET.

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Part NumberIPU80R1K4CE
ManufacturerInfineon
Overview CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencyleve.
*Highvoltagetechnology
*Extremedv/dtrated
*Highpeakcurrentcapability
*Lowgatecharge
*Loweffectivecapacitances
*Qualified according to JEDEC Standard
*Pb-freeleadplating;RoHScompliant; halogenfreemoldcompound DPAK tab 2 1 3 IPAK tab 1 23 Drain Pin 2 Gate Pin 1 Source Pi.
Part NumberIPU80R1K4CE
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio.
*Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A)
*Advanced trench process technology
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Fast switching application.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .