IPW50R250CP Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤250mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- High Peak Current Capability
| Part | IPW50R250CP |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 238.46 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPW50R250CP | Infineon | Power Transistor |