| Part Number | IPW50R250CP Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied ac.
* Lowest figure-of-merit RON x Qg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Pb-free lead plating; RoHS compliant * Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPW50R250CP 550 V 0.250 Ω 27 nC PG-TO247 . |
IPW50R250CP Datasheet and Specifications PDF
The IPW50R250CP is a Power Transistor.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Pins | 3 |
| Height | 21.1 mm |
| Length | 16.03 mm |
| Width | 5.16 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPW50R250CP Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW50R250CP IIPW50R250CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤250mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-.
*Static drain-source on-resistance: RDS(on)≤250mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High Peak Current Capability *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source . |