Inchange Semiconductor IRF140
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | IRF140 |
|---|---|
| Datasheet | IRF140 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID=27A@ TC=25℃●Drain Source Voltage- : VDSS= 100V(Min)
●Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max)
●High Power,High Speed
APPLICATIONS
●Minimum Lot-to-Lot variations for robust device performance and reliable operationAPPLICATIONS
●Switching power supplies●UPS,AC and DC motor controls
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 27 A ID Drain Current-continuous@ TC=100℃ 17 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W IRF140 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Bre...