Inchange Semiconductor IRF3710
N-Channel MOSFET Transistor
| Part No. | IRF3710 |
|---|---|
| Datasheet | IRF3710 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID=57A@ TC=25℃●Drain Source Voltage- : VDSS= 100V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Designed for high effciency switch mode power supplies, Power factor correction and electronic lamp ballasts based on half bridge.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 57 A IDM Drain Current-Single Plused 230 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.75 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710
ELECTRICAL CHARACTERISTICS
TC=25℃ u...