Inchange Semiconductor IRF452
N-Channel MOSFET Transistor
DESCRIPTION
●11A,500V●Low RDS(on) at high voltage
●Improved inductive ruggedness
●Low input Characteristics
●Fast switching times
●Extended safe operating area
APPLICATIONS
●Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 11 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.83 30 ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF452...