Samsung semiconductor IRF452
N-Channel Power MOSFET
IRF452 Specifications
- Drain-Source Resistance : 500mΩ
- Min Breakdown Voltage : 500V
- Terminals : 2
- Max Power Dissipation : 125W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | IRF452 |
|---|---|
| Datasheet | IRF452 Download |
| Manufacturer |  Samsung semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
