Inchange Semiconductor IRF540FI
N-Channel MOSFET Transistor
IRF540FI Specifications
- Package : TO-220-3
- Drain-Source Resistance : 77mΩ
- Drain-Source Voltage : 100V
- Terminals : 3
- Rise Time : 45ns
- Fall Time : 20ns
- Max Power Dissipation : 40W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF540FI |
|---|---|
| Datasheet | IRF540FI Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Low RDS(on)●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●DESCRITION
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 16 A IDM Drain Current-Single Plused 64 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF540FI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PA...