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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF540FI
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
16
A
IDM
Drain Current-Single Plused
120
A
PD
Total Dissipation @TC=25℃
45
W
Tj
Max.
IRF540FI Datasheet
