IRF540FI Datasheet and Specifications PDF

The IRF540FI is a N-Channel MOSFET Transistor.

Datasheet4U Logo
Part NumberIRF540FI Datasheet
ManufacturerInchange Semiconductor
Overview INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification RF540FI ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requireme.
*Low RDS(on)
*VGS Rated at ±20V
*Silicon Gate for Fast Switching Speed
*Rugged
*Low Drive Requirements
*DESCRITION
*Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
*ABSOLUTE MAXIMUM R.
Part NumberIRF540FI Datasheet
Description100V 30A N-Channel Power MOSFET
ManufacturerSTMicroelectronics
Overview IRF540 IRF540FI N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET TYPE V DSS RDS(on) ID IRF540 I RF5 40F I 100 V < 0.077 Ω 100 V < 0.077 Ω 30 A 16 A s TYPICAL RDS(on) = 0.050 Ω s A. g Storage Temperature Tj Max. Operating Junction Temperature (
*) Pulse width limited by safe operating area Value IRF530 IRF 530 FI 100 100 ± 20 30 17 21 12 120 120 150 45 1 0.3 - 2000 -65 to 175 175 (1) ISD ≤30 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A .
Part NumberIRF540FI Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF540FI ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot v.
*Low RDS(on)
*VGS Rated at ±20V
*Silicon Gate for Fast Switching Speed
*Rugged
*Low Drive Requirements
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Designed especially for high voltage,high speed applications, such as off-line switching power supp.