Inchange Semiconductor IRF626
N-Channel Mosfet Transistor
| Part No. | IRF626 |
|---|---|
| Datasheet | IRF626 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
FEATURES
●RDS(on) =1.1Ω●3.8A and 275V
●single pulse avalanche energy rated
●SOA is Power- Dissipation Limited
●Linear Transfer Characteristics
●High Input Impedance isc Product Specification IRF626
●DESCRITION
●Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 275 ±20 V V ID Drain Current-Continuous 3.8 A IDM Drain Current-Single Plused 15 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 80 ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ un...