IRF710 Datasheet | Inchange Semiconductor

FEATURES - Low RDS(on) - VGS Rated at ±20V - Silicon Gate for Fast Switching Speed - Rugged - Low Drive Requirements - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±20 Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to...