Inchange Semiconductor IRF710
N-Channel MOSFET
| Part No. | IRF710 |
|---|---|
| Datasheet | IRF710 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Low RDS(on)●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Plused 5 A PD Total Dissipation @TC=25℃ 36 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W IRF710 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor IRF710
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
