Datasheet Summary
- 95162
IRF7101PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free
Description
HEXFET® Power MOSFET
S1
G1
S2
G2
D1
D1
D2
D2
Top View
VDSS = 20V RDS(on) = 0.10Ω
ID = 3.5A
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide...