Datasheet Details
| Part number | IRF7101PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 284.15 KB |
| Description | Power MOSFET |
| Datasheet | IRF7101PBF_InternationalRectifier.pdf |
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Overview: PD - 95162 IRF7101PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l.
| Part number | IRF7101PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 284.15 KB |
| Description | Power MOSFET |
| Datasheet | IRF7101PBF_InternationalRectifier.pdf |
|
|
|
HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS = 20V RDS(on) = 0.10Ω ID = 3.5A Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.
| Part Number | Description |
|---|---|
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