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IRF7103PBF - Power MOSFET

General Description

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.

With these improvements, multiple devices can be used in an application with dramatically reduced board space.

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Other Datasheets by International Rectifier (now Infineon)

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IRF7103 Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -95037B IRF7103PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 50V S2 3 G2 4 6 D2 RDS(on) = 0.130Ω 5 D2 Top View ID = 3.0A Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.