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IRF7107 - HEXFET Power MOSFET

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • PD M t 1 t 2 N otes: 1 . D uty fac tor D = t 1 / t 2 0.1 0.00001 2. P ea k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Section for the following: Appendix A: Appendix B: Appendix C: Appendix D: Figure 24, Peak Diode Recovery dv/dt Test Circuit.
  • See page 329. Package Outline Mechanica.

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Full PDF Text Transcription

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PD - 9.1099B PRELIMINARY IRF7107 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
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