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PD - 9.1095B
IRF7103
HEXFET® Power MOSFET
l l l l l l l
Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S1 G1 S2 G2
1
8
D1 D1 D2 D2
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7
VDSS = 50V RDS(on) = 0.130Ω ID = 3.0A
3
6
4
5
Top View
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
IRF7103 Datasheet
