Datasheet Details
| Part number | IRF7103 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 169.19 KB |
| Description | Power MOSFET |
| Datasheet | IRF7103_InternationalRectifier.pdf |
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Overview: PD - 9.1095B IRF7103 HEXFET® Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 50V RDS(on) = 0.130Ω ID = 3.
| Part number | IRF7103 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 169.19 KB |
| Description | Power MOSFET |
| Datasheet | IRF7103_InternationalRectifier.pdf |
|
|
|
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.
| Part Number | Description |
|---|---|
| IRF7103PBF | Power MOSFET |
| IRF7103Q | Power MOSFET |
| IRF7103QPbF | Power MOSFET |
| IRF7101 | Power MOSFET |
| IRF7101PBF | Power MOSFET |
| IRF7102 | Power MOSFET |
| IRF7104 | HEXFET Power MOSFET |
| IRF7104PBF | HEXFET Power MOSFET |
| IRF7105 | Power MOSFET |
| IRF7105PBF | Power MOSFET |