IRF7103QPbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96101C IRF7103QPbF Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l.

Datasheet Details

Part number	IRF7103QPbF
Manufacturer	International Rectifier (now Infineon)
File Size	251.15 KB
Description	Power MOSFET
Datasheet	IRF7103QPbF-InternationalRectifier.pdf

General Description

This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Key Features

of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

IRF7103QPbF Distributor

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