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IRF7103QPbF - Power MOSFET

General Description

This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96101C IRF7103QPbF Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. VDSS 50V HEXFET® Power MOSFET RDS(on) max (mW) 130@VGS = 10V 200@VGS = 4.5V ID 3.0A 1.