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IRF7103Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 93944C AUTOMOTIVE MOSFET Typical Applications q q q IRF7103Q HEXFET® Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified S1 VDSS 50V RDS(on) max (mΩ) 130@VGS = 10V 200@VGS = 4.5V ID 3.0A 1.5A Benefits q q q q q q 1 8 D1 D1 D2 D2 Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.