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IRF710A - N-Channel Mosfet Transistor

Key Features

  • Avalanche Rugged Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Low RDS(ON) : 2.815 Ω (Typ. ).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF710A ·FEATURES ·Avalanche Rugged Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Low RDS(ON) : 2.815 Ω (Typ.) ·DESCRITION ·designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 400 V Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous 2A Drain Current-Single Plused 6A Total Dissipation @TC=25℃ Max.