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IRF7104 - HEXFET Power MOSFET

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • oshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR.

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Full PDF Text Transcription

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PD - 9.1096B IRF7104 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.250Ω ID = -2.3A 3 4 6 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
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