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IRF7104 - HEXFET Power MOSFET

General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Overview

PD - 9.1096B IRF7104 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast.

Key Features

  • ima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR.