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IRF7105 - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Overview

l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet S1 l Surface Mount G1 l Available in Tape & Reel l Dynamic dv/dt Rating S2 l Fast Switching G2 l.