IRF7105QPBF Datasheet | International Rectifier

END OF LIFE - 96102B IRF7105QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free S1 G1 S2 G2 Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8...