IRF7105PBF
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
S1 G1 S2 G2
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
- 95164
IRF7105Pb F
HEXFET® Power MOSFET
N-CHANNEL MOSFET 18
45 P-CHANNEL MOSFET
Top View
D1 N-Ch P-Ch
D1
VDSS
D2
25V...
