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IRF7106 - Power MOSFET

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • 0.20 10 0.10 0.05 0.02 1 PD M 0.01 SINGLE PULSE (.

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Full PDF Text Transcription

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PD - 9.1098B PRELIMINARY IRF7106 N-CHANNEL MOSFET 1 8 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
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