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IRF820FI - N-Channel MOSFET

Key Features

  • Low RDS(on) = 2.5Ω(TYP).
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Fast Switching Speed.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) = 2.5Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION High current , high speed switching ·Switching mode power supplies ·DC-DC & DC-AC converter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2.2 A IDM Drain Current-Single Plused 12 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.