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IRF823 Datasheet PDF

Inchange Semiconductor IRF823

N-Channel MOSFET Transistor

Part No. IRF823
Datasheet IRF823 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF823 datasheet page 1 preview

FEATURES

●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area
●Rugged Gate Oxide Technology

DESCRIPTION

●Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±20 V V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 7A PD Total Dissipation @TC=25℃ 50 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc Product Specification THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.5 80 UNIT ℃/W ℃/W isc website: 2 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF823

ELECTRICAL CHARACTERISTICS

TC=2...
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