Download IRFAF30 Datasheet PDF
Inchange Semiconductor
IRFAF30
IRFAF30 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - With To-3 package - Low input capacitance and gate charge - Low gate input resistance - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tch Max. Operating Junction Temperature Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.42 UNIT ℃/W IRFAF30 isc website:.iscsemi.cn 1 isc & iscsemi is registered...