IRFAF30 Datasheet | International Rectifier

feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features : n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 2.0 1.7 8.0 75 0.6 ±20 100 2.0 7.5 1.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical) Units A W/°C V m J A m J V/ns o C g .irf. 01/24/01 Electrical Characteristics Parameter BVDSS ∆BV DSS/∆TJ RDS(on) VGS(th) gfs IDSS @ Tj = 25°C (Unless Otherwise Specified) Min - - - 2.0 2.3 - - - - 29 3.2 16 - - - - - Typ Max Units - 1.2 - - - - - - - - - - - - - - - 6.1 - - 4.0 4.6 4.0 - 25 250 100 -100 66 7.2 37 21 30 140 47 - V V/°C Ω V S( )...