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IRFB3607 - TO-220 N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤9.0mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for IRFB3607 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFB3607. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607,IIRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching S...

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urce on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 310 PD Total Dissipation @TC=25℃ 140 Tj Max.