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IRFB3607PBF - Power MOSFET

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  • h 150 125 100 75 50 25 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 46A Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below base.

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PD - 97308C Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607PbF IRFS3607PbF IRFSL3607PbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S VDSS RDS(on) typ. max. ID D 75V 7.34m: 9.
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