Inchange Semiconductor IRFBC30
TO-220C N-Channel MOSFET Transistor
| Part No. | IRFBC30 |
|---|---|
| Datasheet | IRFBC30 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-220C N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Lower Input Capacitance●Improved Gate Charge
●Extended Safe Operating Area
●Rugged Gate Oxide Technology
DESCRIPTION
●High current ,high speed switching●Switch mode power supplies
●DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±20 V V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 75 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX UNIT 1.7 ℃/W 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETE...