Inchange Semiconductor IRFBC40AS
N-Channel MOSFET
| Part No. | IRFBC40AS |
|---|---|
| Datasheet | IRFBC40AS Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX)●Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Switching Voltage Regulators
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 6.2 A IDM Drain Current-Single Pulsed 25 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFBC40AS
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 600 VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.25mA 2 V...