Datasheet Details
| Part number | IRFJ240 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.98 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFJ240-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IRFJ240.
| Part number | IRFJ240 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.98 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFJ240-INCHANGE.pdf |
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·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 13 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.8 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFJ240 | N-Channel MOSFET | Seme LAB |
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