Seme LAB IRFJ240
N-Channel MOSFET
MECHANICAL DATA
Dimensions in mm (inches) 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. N–CHANNEL POWER MOSFET FOR HI–RELAPPLICATIONS
VDSS ID(cont) RDS(on) 200V 13A 0.18Ω 14.48 (0.570) 14.99 (0.590) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 2 0.71 (0.028) 0.86 (0.034)FEATURES
● HERMETICALLY SEALED TO-66 METAL PACKAGE● SIMPLE DRIVE REQUIREMENTS TO-66 METAL PACKAGE (TO213AA) Underside View Pin 1 = Gate Pin 2 = Source Case = Drain
● SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 13A 8A 50A 70W 0.56W/°C –55 to 150°C 1.8°C/W max.