Inchange Semiconductor IRFP250
N-Channel MOSFET Transistor
| Part No. | IRFP250 |
|---|---|
| Datasheet | IRFP250 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V●Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Switching Voltage Regulators
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 190 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.65 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFP250
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.