Inchange Semiconductor IRFP360
N-Channel MOSFET Transistor
| Part No. | IRFP360 |
|---|---|
| Datasheet | IRFP360 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 23A@ TC=25℃●Drain Source Voltage- : VDSS= 400V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)
●Fast Switching
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±20 V V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 92 A PD Total Dissipation @TC=25℃ 250 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.50 30 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP360ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Sourc...