Datasheet4U Logo Datasheet4U.com

IRFP360 - N-Channel MOSFET

Key Features

  • Fast switching times.
  • International standard packages.
  • Low R.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt T J ≤ 150°C, R G = 2 Ω TC = 25°C Mounting torque Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 400 V 400 V ±20 V ±30 V 23 A 14 A 92 A 23 A 30 mJ 5 V/ns 300 -55 ... +150 150 -55 ... +150 1.13/10 6 300 W °C °C °C Nm/lb.in. g °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min.