IXYS IRFP360
N-Channel MOSFET
| Part No. | IRFP360 |
|---|---|
| Datasheet | IRFP360 Download |
| Manufacturer |  IXYS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
400 V 400 V ±20 V ±30 V 23 A 14 A 92 A 23 A 30 mJ 5 V/ns 300 -55 ... +150 150 -55 ... +150 1.13/10 6 300 W °C °C °C Nm/lb.in. g °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA 400 2 VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 14A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% V 4V ±100 nA 25 µA 250 µA 0.20 Ω TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = DrainFEATURES
● Fast switching times● International standard packages
● Low R HDMOSTM process DS (on)
● Rugged polysilicon gate cell structure
● High commuting dv/dt rating
APPLICATIONS
● DC choppers● Motor Controls
● Switch-mode and resonant-mode
● Uninterruptable power supplies (UPS) Advantages
● Space savings
● High power density
● Easy to mount with 1 screw (isolated mounting screw hole) This data reflects the objective technical specification and characterization data from engineering lots.
