IRFP360 Description
+150 1.13/10 6 300 W °C °C °C Nm/lb.in. g °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min.
IRFP360 Key Features
- Fast switching times
- International standard packages
- Low R HDMOSTM process DS (on)
- Rugged polysilicon gate cell structure
- High muting dv/dt rating