Overview: MegaMOSTMFET
N-Channel Enhancement Mode IRFP 360 VDSS = 400 V
ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol
VDSS V
DGR
VGS VGSM
ID25 ID100 IDM IAR
EAR
dv/dt
PD
TJ TJM Tstg
Md
Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt T J ≤ 150°C, R G = 2 Ω TC = 25°C Mounting torque Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 400 V 400 V
±20 V ±30 V
23 A 14 A 92 A 23 A
30 mJ
5 V/ns 300
-55 ... +150 150
-55 ... +150
1.13/10
6
300 W
°C °C °C
Nm/lb.in.
g
°C Symbol
VDSS VGS(th) IGSS IDSS
RDS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA 400 2 VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 14A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% V 4V
±100 nA
25 µA 250 µA
0.
