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IRFP360 - N-Channel MOSFET Transistor

Description

purpose applications.

Features

  • Drain Current.
  • ID= 23A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 400V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max).
  • Fast Switching.

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Full PDF Text Transcription

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP360 FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±20 V V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 92 A PD Total Dissipation @TC=25℃ 250 W TJ Max.
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