Download IRFP360PBF Datasheet PDF
Inchange Semiconductor
IRFP360PBF
IRFP360PBF is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Drain Current - ID= 23A@ TC=25℃ - Drain Source Voltage- : VDSS= 400V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION - Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT ±20 -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.50...