IRFP360 Datasheet | Intersil

.. Data Sheet July 1999 File Number 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17464. Features - 23A, 400V - r DS(ON) = 0.200Ω - Single Pulse Avalanche Energy Rated - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER IRFP360 PACKAGE TO-247 BRAND IRFP360 Symbol NOTE: When ordering, use the entire part number. .. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) 4-341 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 Data Sheet 4 U . . .....