IRFP360LC Datasheet | Vishay

IRFP360LC, Si HFP360LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) 400 VGS = 10 V Qgs (n C) Qgd (n C) Configuration Single TO-247AC S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Features - Ultra Low Gate Charge - Reduced Gate Drive Requirement - Enhanced 30 V VGS Rating - Reduced Ciss, Coss, Crss - Isolated Central Mounting Hole - Dynamic d V/dt Rated - Repetitive Avalanche Rated - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements bined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC IRFP360LCPb F Si HFP360LC-E3 IRFP360LC Si...