IRFP360 Datasheet | Specifications & PDF Download

www.vishay.com IRFP360 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 400 VGS = 10 V

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP360 FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Volt

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HEXFET® Power MOSFET PD - 9.1230 IRFP360LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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PD - 94951 IRFP360LCPbF • Lead-Free www.irf.com 1 1/28/04 IRFP360LCPbF 2 www.irf.com IRFP360LCPbF www.irf.com 3 IRFP360LCPbF 4 www.irf.c

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www.DataSheet4U.com IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is desig

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IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 110 Qgs (nC) 28 Qgd (nC)

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MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP360LC ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switchin

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance

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