Inchange Semiconductor IRFP450
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | IRFP450 |
|---|---|
| Datasheet | IRFP450 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 14A@ TC=25℃●Drain Source Voltage- : VDSS= 500V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max)
●Fast Switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 14 A 56 A 180 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.7 30 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwi...