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IRFPG40 - N-Channel MOSFET

Description

Drain Current ID= 4.3A@ TC=25℃ Drain Source Voltage : VDSS= 600V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM R

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Datasheet Details

Part number IRFPG40
Manufacturer INCHANGE
File Size 231.82 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFPG40 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 4.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4.3 A ID(puls) Pulse Drain Current 17 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
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