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IRFPG40 - N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 4.3A, 1000V.
  • rDS(ON) = 3.500Ω.
  • UIS SOA Rating Curve (Single Pulse).
  • -55oC to 150oC Operating and Storage Temperature Symbol D G Ordering Information PART NUMBER IRFPG40.

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IRFP140N N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFPG40 Data Sheet July 1999 File Number 2879.2 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09850. Features • 4.3A, 1000V • rDS(ON) = 3.