IRFPG40 Description
IRFPG40 Data Sheet July 1999 File Number 2879.2 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...
IRFPG40 Key Features
- 4.3A, 1000V
- rDS(ON) = 3.500Ω
- UIS SOA Rating Curve (Single Pulse)
- 55oC to 150oC Operating and Storage Temperature