Inchange Semiconductor IRFS250A
N-Channel MOSFET Transistor
IRFS250A Specifications
- Drain-Source Resistance : 85mΩ
- Min Breakdown Voltage : 200V
- Terminals : 3
- Max Power Dissipation : 90W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | IRFS250A |
|---|---|
| Datasheet | IRFS250A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Avalanche Rugged Technology●Rugged Gate Oxide Technology
●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 21.3 A IDM Drain Current-Single Pluse 130 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.38 40 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS250AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Break...