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IRFS254A Datasheet PDF

Inchange Semiconductor IRFS254A

N-Channel MOSFET Transistor

Part No. IRFS254A
Datasheet IRFS254A Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRFS254A datasheet page 1 preview

FEATURES

●Avalanche Rugged Technology
●Rugged Gate Oxide Technology
●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area

DESCRIPTION

●Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±30 V V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pluse 64 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.38 40 UNIT ℃/W ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS254A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdow...
IRFS254A page 2 preview