Inchange Semiconductor IRFS350A
N-Channel MOSFET Transistor
| Part No. | IRFS350A |
|---|---|
| Datasheet | IRFS350A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Avalanche Rugged Technology●Rugged Gate Oxide Technology
●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±30 V V ID Drain Current-Continuous 11.5 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 92 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.35 40 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS350AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakd...