International Rectifier IRFS350A
Advanced Power MOSFET
| Part No. | IRFS350A |
|---|---|
| Datasheet | IRFS350A Download |
| Manufacturer |  International Rectifier |
| Description | Advanced Power MOSFET |
| Buy | Stock & Price |
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) IRFS350A BVDSS = 400 V RDS(on) = 0.3Ω ID = 11.5 A TO-3PF 1 2 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 400 11.5 7.3 68 ±30 1134 11.5 9.2 4.0 92 0.74 - 55 to +150 Units V A A V mJ A mJ V/ns W W/°C °C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max.
