IRFS350A - Advanced Power MOSFET

IRF

Key Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
Low RDS(ON): 0.254Ω (Typ. ) IRFS350A BVDSS = 400 V RDS(on) = 0.3Ω ID = 11.5 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous.

IRFS350A advanced power mosfet by IRF - Datasheet Preview

Datasheet Details

Part number	IRFS350A
Manufacturer	IRF
File Size	231.97 KB
Description	Advanced Power MOSFET
Datasheet	IRFS350A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) IRFS350A BVDSS = 400 V RDS(on) = 0.3Ω ID = 11.5 A TO-3PF 1 2 3 1.Gate 2. Drain 3.